Silicon Labs Adds Si828x Version 2 Expands Isolated Gate Driver Portfolio

Beijing, China – May 18, 2021 – Silicon Labs (also known as Silicon Labs, NASDAQ: SLAB), a leading provider of chips, software and solutions for a smarter, more connected world, today announced its isolation barrier The pole driver product family adds a new member, the Si828x version 2. This update enables the product family to implement high-efficiency silicon carbide (SiC) field-effect Transistor (FET) gate drives to meet the evolving half- and full-bridge inverter and power supply markets that require increased power density, Lower operating temperature and reduce switching losses.

Silicon Labs Adds Si828x Version 2 Expands Isolated Gate Driver Portfolio

Brian Mirkin, vice president and general manager of power products at Silicon Labs, said: “The Si828x product family has several advantages that make it ideal for hybrid and electric vehicle (EV) and industrial applications. When designing automotive chargers and traction inverters , customers using SiC FETs for power switching can greatly benefit from the Si828x’s unique combination of features, including robust gate drive, robust desaturation fault response, and high-efficiency Miller clamping.”

Silicon Labs has partnered with Wolfspeed, a major provider of SiC solutions, and its gate drivers have been tested with Wolfspeed SiC MOSFETs.

Jay Cameron, senior vice president and general manager of power products at Wolfspeed, said: “The adoption of SiC in electric vehicles for power conversion and inverter applications is rapidly increasing as SiC meets consumer demand for higher range and faster charging. . A gate driver optimized for SiC MOSFETs that maximizes the use of SiC in these applications.”

Wolfspeed SiC FETs used with the Si828x family increase power and conversion efficiency, which means fewer battery cells, more power delivered to the electric motor, and lower operating costs. Click here for test reports on the Silicon Labs Si828x and Wolfspeed C3M families; click here for documentation of the half-bridge reference designs used in the tests.

Si828x version 2 includes the following features:

4 Amp peak gate drive current efficiently switches SiC FETs and IGBTs, reducing operating costs for EV and industrial applications

Improved Common Mode Transient Immunity (CMTI) supports reduced switching transition time, higher switching frequency, and lower system losses

Additional undervoltage lockout (UVLO) setting increases flexibility of SiC FETs to prevent poor power supply

Integrated DC-DC converter simplifies design and reduces system cost

Provides FET desaturation protection to detect and eliminate fault conditions

Includes Miller clamp to eliminate parasitic-induced breakdown

Si828x version 2 isolated gate drivers are available now.

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